First Experimental Demonstration of Self-Aligned Flip FET (FFET): A Breakthrough Stacked Transistor Technology with 2.5T Design, Dual-Side Active and Interconnects. - Haoran Lu; Yandong Ge; Xun Jiang 002; Jiacheng Sun; Wanyue Peng; Rui Guo; Ming Li; Yibo Lin; Runsheng Wang; Heng Wu 007; Ru Huang 001 (VLSI Technology and Circuits, 2024)