Yang Huang

Orcid: 0000-0002-0403-7826

Affiliations:
  • Institute of Microelectronics of Chinese Academy of Sciences, Beijing, China


According to our database1, Yang Huang authored at least 2 papers in 2018.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

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Article 
PhD thesis 
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Links

Online presence:

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Bibliography

2018
The total ionizing dose response of leading-edge FDSOI MOSFETs.
Microelectron. Reliab., 2018

Constant voltage stress characterization of nFinFET transistor during total ionizing dose experiment.
Microelectron. Reliab., 2018


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