Constant voltage stress characterization of nFinFET transistor during total ionizing dose experiment. - Binhong Li; Yang Huang 002; Jianfei Wu; Yunbo Huang; Bo Li 051; Qingzhu Zhang; Ling Yang; Fayu Wan; Jiajun Luo; Zhengsheng Han; Huaxiang Yin (Microelectron. Reliab., 2018)

The total ionizing dose response of leading-edge FDSOI MOSFETs. - Jian Wang; Binhong Li; Yang Huang 002; Kai Zhao; Fang Yu; Qiwen Zheng; Qi Guo 007; Liewei Xu; J. Gao; X. Cai; Y. Cui (Microelectron. Reliab., 2018)

The Synergetic Effects of Total Ionizing Dose and High Temperature on 180 nm DSOI Technology. - Xu Zhang; Fanyu Liu; Bo Li 051; Siyuan Chen; Yang Huang 002; Jiangjiang Li; Jian Jiao; Tianchun Ye 001; Jiajun Luo (APCCAS, 2022)

Single Event Induced Crosstalk of Monolithic 3D Circuits Based on a 22 nm FD-SOI Technology. - Junjun Zhang; Fanyu Liu; Bo Li 051; Yang Huang 002; Siyuan Chen; Yuchong Wang; Jiajun Luo; Jing Wan (IRPS, 2022)

The Effects of $ gamma$ Radiation-Induced Trapped Charges on Single Event Transient in DSOI Technology. - Yuchong Wang; Siyuan Chen; Fanyu Liu; Bo Li 051; Jiangjiang Li; Yang Huang 002; Tiexin Zhang; Xu Zhang; Zhengsheng Han; Tianchun Ye 001; Jing Wan (IRPS, 2023)