A flexible power model for mm-wave and THz high-throughput communication systems. - Claude Desset; Piet Wambacq; Yang Zhang 081; Mark Ingels; André Bourdoux (PIMRC, 2020)

26.4 A Reflection-Coefficient Sensor for 28GHz Beamforming Transmitters in 22nm FD-SOI CMOS. - Yang Zhang 081; Giovanni Mangraviti; Johan Nguyen; Zhiwei Zong; Piet Wambacq (ISSCC, 2021)

A Low-Power Reflection-Coefficient Sensor for 28-GHz Beamforming Transmitters in 22-nm FD-SOI CMOS. - Yang Zhang 081; Giovanni Mangraviti; Johan Nguyen; Zhiwei Zong; Kamil Yavuz Kapusuz; Sam Lemey; Hendrik Rogier; Giuseppe Gramegna; Piet Wambacq (IEEE J. Solid State Circuits, 2021)

A Compact 0.98 THz Source With On-Chip Antenna In 250-nm InP DHBT. - Senne Gielen; Yang Zhang 081; Mark Ingels; Patrick Reynaert (BCICTS, 2023)

A 33 dBm, >30% PAE GaN Power Amplifier Based on a Sub-Quarter-Wavelength Balun for 5G Applications. - Dongyang Yan; Yang Zhang 081; Dries Peumans; Mark Ingels; Piet Wambacq (BCICTS, 2023)

A Compact K-band, Asymmetric Coupler-based, Switchless Transmit-Receive Front-End in 0.15μm GaN-on-SiC Technology. - Dongyang Yan; Sehoon Park; Yang Zhang 081; Mark Ingels; Piet Wambacq (ESSCIRC, 2023)

A 0.13μm GaAs HEMT Reconfigurable Balance-to-Doherty Stacked Power Amplifier for 5G mm-wave Applications. - Dongyang Yan; Yang Zhang 081; Mark Ingels; Piet Wambacq (PRIME, 2023)

A D-band Power-Combined Stacked Common-Base Power Amplifier Achieving 20.9 dBm Psat and 24.3 % PAE in a 250-nm InP HBT Technology. - Arno Hemelhof; Sehoon Park; Yang Zhang 081; Mark Ingels; Giuseppe Gramegna; Kristof Vaesen; Dongyang Yan; Piet Wambacq (BCICTS, 2024)