Quasi-two-dimensional subthreshold current model of deep submicrometer SOI drive-in gate controlled hybrid transistors with lateral non-uniform doping profile. - Ru Huang 001; Weihai Bu; Xing Zhang 002; Yangyuan Wang (Sci. China Ser. F Inf. Sci., 2001)

Extraction of the lateral distribution of interface traps in MOSFETs by a novel combined gated-diode technique. - Jin He 003; Xing Zhang 002; Ru Huang 001; Yangyuan Wang (Microelectron. Reliab., 2001)

Application of forward gated-diode R-G current method in extracting F-N stress-induced interface traps in SOI NMOSFETs. - Jin He 003; Xing Zhang 002; Ru Huang 001; Yangyuan Wang (Microelectron. Reliab., 2002)

Hot carrier degradation behavior in SOI dynamic-threshold-voltage nMOSFET's (n-DTMOSFET) measured by gated-diode configuration. - Ru Huang 001; Jinyan Wang; Jin He 003; Min Yu; Xing Zhang 002; Yangyuan Wang (Microelectron. Reliab., 2003)

A Complete Carrier-Based Non-Charge-Sheet Analytic Theory for Nano-Scale Undoped Surrounding-Gate MOSFETs. - Jin He 003; Xing Zhang 002; Ganggang Zhang; Mansun Chan; Yangyuan Wang (ISQED, 2006)

A Carrier-Based Analytic Model for Undoped (Lightly Doped) Ultra-Thin-Body Silicon-on-Insulator (UTB-SOI) MOSFETs. - Jin He 003; Xing Zhang 002; Ganggang Zhang; Yangyuan Wang (ISQED, 2006)

Frequency-Independent Asymmetric Double-$pi $Equivalent Circuit for On-Chip Spiral Inductors: Physics-Based Modeling and Parameter Extraction. - Fengyi (Fred) Huang; Jingxue Lu; Nan Jiang; Xiaowen Zhang; Wengang Wu; Yangyuan Wang (IEEE J. Solid State Circuits, 2006)

A New Test Data Compression Scheme for Multi-scan Designs. - Teng Lin; Jianhua Feng; Yangyuan Wang (ISVLSI, 2007)

Novel devices and process for 32 nm CMOS technology and beyond. - Yangyuan Wang; Xing Zhang 002; Xiaoyan Liu; Ru Huang 001 (Sci. China Ser. F Inf. Sci., 2008)

Challenges of 22 nm and beyond CMOS technology. - Ru Huang 001; HanMing Wu; Jinfeng Kang; Deyuan Xiao; XueLong Shi; Xia An; Yu Tian; Runsheng Wang; Liangliang Zhang; Xing Zhang 002; Yangyuan Wang (Sci. China Ser. F Inf. Sci., 2009)

A novel voltage-type sense amplifier for low-power nonvolatile memories. - Ming Li; Jinfeng Kang; Yangyuan Wang (Sci. China Inf. Sci., 2010)

A PVT Tolerant 10 to 500 MHz All-Digital Phase-Locked Loop With Coupled TDC and DCO. - Wei Liu; Wei (Ruth) Li; Peng Ren; Chinglong Lin; Shengdong Zhang; Yangyuan Wang (IEEE J. Solid State Circuits, 2010)

A Single-Chip CMOS UHF RFID Reader Transceiver for Chinese Mobile Applications. - Le Ye; Huailin Liao; Fei Song; Jiang Chen; Chen Li 014; Jinshu Zhao; Ruiqiang Liu; Chuan Wang; Congyin Shi; Junhua Liu; Ru Huang 001; Yangyuan Wang (IEEE J. Solid State Circuits, 2010)

Deteriorated radiation effects impact on the characteristics of MOS transistors with multi-finger configuration. - Jian Wang; Wenhua Wang; Ru Huang 001; Yunpeng Pei; Shoubin Xue; Xin'an Wang; Chunhui Fan; Yangyuan Wang (Microelectron. Reliab., 2010)

Characterization and analysis of gate-all-around Si nanowire transistors for extreme scaling. - Ru Huang 001; Runsheng Wang; Jing Zhuge; Changze Liu; Tao Yu; Liangliang Zhang; Xin Huang; Yujie Ai; Jinbin Zou; Yuchao Liu; Jiewen Fan; Huailin Liao; et al. (CICC, 2011)

Process optimization of plasma nitridation SiON for 65 nm node gate dielectrics. - Yandong He; Xing Zhang; Yangyuan Wang (Sci. China Inf. Sci., 2011)

The driving force for development of IC and system in future: Reducing the power consumption and improving the ratio of performance to power consumption. - Yangyuan Wang (Sci. China Inf. Sci., 2011)

HCI and NBTI induced degradation in gate-all-around silicon nanowire transistors. - Ru Huang 001; Runsheng Wang; Changze Liu; Liangliang Zhang; Jing Zhuge; Yu Tao; Jinbin Zou; Yuchao Liu; Yangyuan Wang (Microelectron. Reliab., 2011)

A low power and small area all digital delay-locked loop based on ring oscillator architecture. - Jiapeng Zheng; Wei Li; Xueqing Lu; Yuhua Cheng; Yangyuan Wang (Sci. China Inf. Sci., 2012)

Designing an Adaptive Acoustic Modem for Underwater Sensor Networks. - Lingjuan Wu; Jennifer Trezzo; Diba Mirza; Paul L. D. Roberts; Jules S. Jaffe; Yangyuan Wang; Ryan Kastner (IEEE Embed. Syst. Lett., 2012)

High temperature induced failure in Ti/Al/Ni/Au Ohmic contacts on AlGaN/GaN heterostructure. - Zhihua Dong; Jinyan Wang; Cheng P. Wen; Shenghou Liu; Rumin Gong; Min Yu; Yilong Hao; Fujun Xu; Bo Shen; Yangyuan Wang (Microelectron. Reliab., 2012)

Impacts of short-channel effects on the random threshold voltage variation in nanoscale transistors. - Runsheng Wang; Tao Yu; Ru Huang 001; Yangyuan Wang (Sci. China Inf. Sci., 2013)

A comb-gate silicon tunneling field effect transistor with improved on-state current. - Zhan Zhan; Qianqian Huang; Ru Huang 001; Wenzhe Jiang; Yangyuan Wang (Sci. China Inf. Sci., 2013)

Highly Power-Efficient Active-RC Filters With Wide Bandwidth-Range Using Low-Gain Push-Pull Opamps. - Le Ye; Congyin Shi; Huailin Liao; Ru Huang 001; Yangyuan Wang (IEEE Trans. Circuits Syst. I Regul. Pap., 2013)

Resistive switching in organic memory devices for flexible applications. - Ru Huang 001; Yimao Cai; Yefan Liu; Wenliang Bai; Yongbian Kuang; Yangyuan Wang (ISCAS, 2014)

A 4.2 mm2 72 mW Multistandard Direct-Conversion DTV Tuner in 65 nm CMOS. - Long Chen 009; Yixiao Wang; Chuan Wang; Jiayi Wang; Congyin Shi; Xuankai Weng; Le Ye; Junhua Liu; Huailin Liao; Yangyuan Wang (IEEE Trans. Circuits Syst. I Regul. Pap., 2014)

Highly Reconfigurable Analog Baseband for Multistandard Wireless Receivers in 65-nm CMOS. - Yixiao Wang; Le Ye; Huailin Liao; Ru Huang 001; Yangyuan Wang (IEEE Trans. Circuits Syst. II Express Briefs, 2015)

Physical understanding and optimization of resistive switching characteristics in oxide-RRAM. - Jinfeng Kang; Peng Huang 004; Zhe Chen; Yudi Zhao; Chen Liu 009; Runze Han; Lifeng Liu; Xiaoyan Liu; Yangyuan Wang; Bin Gao 006 (ESSDERC, 2016)

Towards reliability-aware circuit design in nanoscale FinFET technology: - New-generation aging model and circuit reliability simulator. - Shaofeng Guo; Runsheng Wang; Zhuoqing Yu; Peng Hao; Pengpeng Ren; Yangyuan Wang; Siyu Liao; Chunyi Huang; Tianlei Guo; Alvin Chen; Jushan Xie; Ru Huang 001 (ICCAD, 2017)

Investigation on the amplitude coupling effect of random telegraph noise (RTN) in nanoscale FinFETs. - Shaofeng Guo; Zhenghan Lin; Runsheng Wang; Zexuan Zhang; Zhe Zhang 006; Yangyuan Wang; Ru Huang 001 (IRPS, 2018)

Evaluation of SRAM Vmin shift induced by random telegraph noise (RTN): physical understanding and prediction method. - Shaofeng Guo; Zhenghan Lin; Runsheng Wang; Dongyuan Mao; Yangyuan Wang; Ru Huang 001 (ISCAS, 2018)

Investigation on NBTI-induced dynamic variability in nanoscale CMOS devices: Modeling, experimental evidence, and impact on circuits. - Shaofeng Guo; Runsheng Wang; Pengpeng Ren; Changze Liu; Mulong Luo; Xiaobo Jiang; Yangyuan Wang; Ru Huang 001 (Microelectron. Reliab., 2018)

Ultra-Low Power Hybrid TFET-MOSFET Topologies for Standard Logic Cells with Improved Comprehensive Performance. - Zhixuan Wang; Yuan Zhong; Cheng Chen; Le Ye; Qianqian Huang; Libo Yang; Yangyuan Wang; Ru Huang 001 (ISCAS, 2019)

New-Generation Design-Technology Co-Optimization (DTCO): Machine-Learning Assisted Modeling Framework. - Zhe Zhang 006; Runsheng Wang; Cheng Chen; Qianqian Huang; Yangyuan Wang; Cheng Hu; Dehuang Wu; Joddy Wang; Ru Huang 001 (CoRR, 2019)

20.2 A 57nW Software-Defined Always-On Wake-Up Chip for IoT Devices with Asynchronous Pipelined Event-Driven Architecture and Time-Shielding Level-Crossing ADC. - Zhixuan Wang; Le Ye; Hao Zhanq; Jiayoon Ru; Haitao Fan; Yangyuan Wang; Ru Huang 001 (ISSCC, 2020)

12.1 A 148nW General-Purpose Event-Driven Intelligent Wake-Up Chip for AIoT Devices Using Asynchronous Spike-Based Feature Extractor and Convolutional Neural Network. - Zhixuan Wang; Le Ye; Ying Liu 069; Peng Zhou; Zhichao Tan; Haitao Fan; Yihan Zhang 002; Jiayoon Ru; Yangyuan Wang; Ru Huang 001 (ISSCC, 2021)

A 148-nW Reconfigurable Event-Driven Intelligent Wake-Up System for AIoT Nodes Using an Asynchronous Pulse-Based Feature Extractor and a Convolutional Neural Network. - Zhixuan Wang; Ying Liu 069; Peng Zhou; Zhichao Tan; Haitao Fan; Yihan Zhang 002; Linxiao Shen; Jiayoon Ru; Yangyuan Wang; Le Ye; Ru Huang 001 (IEEE J. Solid State Circuits, 2021)

A Software-Defined Always-On System With 57-75-nW Wake-Up Function Using Asynchronous Clock-Free Pipelined Event-Driven Architecture and Time-Shielding Level-Crossing ADC. - Zhixuan Wang; Hao Zhang 119; Yihan Zhang 002; Linxiao Shen; Jiayoon Ru; Haitao Fan; Zhichao Tan; Yangyuan Wang; Le Ye; Ru Huang 001 (IEEE J. Solid State Circuits, 2021)

Ultra-Low-Power and Performance-Improved Logic Circuit Using Hybrid TFET-MOSFET Standard Cells Topologies and Optimized Digital Front-End Process. - Zhixuan Wang; Le Ye; Qianqian Huang; Kaixuan Du; Zhichao Tan; Yangyuan Wang; Ru Huang 001 (IEEE Trans. Circuits Syst. I Regul. Pap., 2021)

Re-Assessment of Steep-Slope Device Design From a Circuit-Level Perspective Using Novel Evaluation Criteria and Model-Less Method. - Zhixuan Wang; Le Ye; Qianqian Huang; Yangyuan Wang; Ru Huang 001 (IEEE Trans. Circuits Syst. I Regul. Pap., 2021)

The Challenges and Emerging Technologies for Low-Power Artificial Intelligence IoT Systems. - Le Ye; Zhixuan Wang; Ying Liu 069; Peiyu Chen; Heyi Li; Hao Zhang 119; Meng Wu 005; Wei He; Linxiao Shen; Yihan Zhang 002; Zhichao Tan; Yangyuan Wang; et al. (IEEE Trans. Circuits Syst. I Regul. Pap., 2021)

Experimental investigation of the gate voltage range of negative differential capacitance in ferroelectric transistors. - Mengxuan Yang; Qianqian Huang; Chang Su; Liang Chen; Yangyuan Wang; Ru Huang 001 (Sci. China Inf. Sci., 2022)

Physical investigation of subthreshold swing degradation behavior in negative capacitance FET. - Mengxuan Yang; Qianqian Huang; Kaifeng Wang; Chang Su; Liang Chen; Yangyuan Wang; Ru Huang 001 (Sci. China Inf. Sci., 2022)