Characterisation of P floating islands for 150-200 V FLYMOSFETs. - Yann Weber; Jaume Roig; Jean-Michel Reynes; Frederic Morancho; Evgueniy N. Stefanov; Monique Dilhan; Gérard Sarrabayrouse (IET Circuits Devices Syst., 2007)

Switching performance of 65 V vertical N-channel FLYMOSFETs. - L. Théolier; Karine Isoird; H. Tranduc; Frederic Morancho; Jaume Roig; Yann Weber; Evgueniy N. Stefanov; Jean-Michel Reynes (Microelectron. J., 2008)

Mechanism of breakdown voltage wavering in power MOSFET induced by silicon crystalline defect. - Yann Weber (Microelectron. Reliab., 2011)

Detectability of automotive power MOSFET on-resistance failure at high current induced by Wafer Fab process excursion. - Yann Weber; Julien Goxe; M. Castignolles (Microelectron. Reliab., 2013)

Signal noise perturbation on automotive mixed-mode semiconductor device generated by graded substrate defect. - Yann Weber; Linda Buffo; Béatrice Vanhuffel; Nicholas Lee; Neal Stirlen; Jeff Chen; Xiang-Dong Wang (Microelectron. Reliab., 2014)