A high-speed low side GaN e-HEMT driver with gate ringing and overshoot suppression. - Jian Jin; Mengyuan Sun; Yannan Yang; Min Xu; David Wei Zhang (IEICE Electron. Express, 2022)

O2 Plasma Alternately Treated ALD-Al2O3 as Gate Dielectric for High Performance AlGaN/GaN MIS-HEMTs. - Qiang Wang; Maolin Pan; Penghao Zhang; Luyu Wang; Yannan Yang; Xinling Xie; Hai Huang; Xin Hu; Min Xu (IEEE Access, 2024)

GaN monolithic digital units on P-GaN platform. - Maolin Pan; Hai Huang; Yifei Zhao; Xin Hu; Yannan Yang; Lewen Qian; Qiang Wang; Penghao Zhang; Saisheng Xu; Min Xu (Microelectron. J., 2024)