Comparison of Analog and Noise Performance between Buried Channel versus Surface Devices in HKMG I/O Devices. - Luca Pirro; Aarthi Jayakumar; Olaf Zimmerhackl; Dieter Lipp; Ralf Illgen; Armin Muehlhoff; Ronny Pfuetzner; Alban Zaka; Michael Otto 003; Jan Hoentschel; Yannick Raffel; Konrad Seidel; et al. (IRPS, 2021)

Interfacial Layer Engineering to Enhance Noise Immunity of FeFETs for IMC Applications. - Yannick Raffel; Sunanda Thunder; Maximilian Lederer; Ricardo Olivo; Raik Hoffmann; Luca Pirro; Sven Beyer; Talha Chohan; Po-Tsang Huang; Sourav De 002; Thomas Kämpfe; Konrad Seidel; et al. (ICICDT, 2022)

Endurance improvements and defect characterization in ferroelectric FETs through interface fluorination. - Yannick Raffel; Ricardo Olivo; Maximilian Lederer; Franz Müller 001; Raik Hoffmann; Tarek Ali; Konstantin Mertens; Luca Pirro; Maximilian Drescher; Sven Beyer; Thomas Kämpfe; Konrad Seidel; et al. (IMW, 2022)

Impact of Temperature on Reliability of MFIS HZO-based Ferroelectric Tunnel Junctions. - Ayse Sünbül; Tarek Ali; Raik Hoffmann; Ricardo Revello; Yannick Raffel; Pardeep Duhan; David Lehninger; Kati Kühnel; Matthias Rudolph; Sebastian Oehler; Philipp Schramm; Malte Czernohorsky; et al. (IRPS, 2022)

Roadmap for Ferroelectric Memory: Challenges and Opportunities for IMC Applications. - Sourav De 002; Maximilian Lederer; Yannick Raffel; Franz Müller 001; Konrad Seidel; Thomas Kämpfe (ISOCC, 2022)

Reconfigurable ferroelectric hafnium oxide FeFET fabricated in 28 nm CMOS technology for mmWave applications. - Sukhrob Abdulazhanov; Quang Huy Le; Dang Khoa Huynh; Maximilian Lederer; Yannick Raffel; Kai Ni 004; Xunzhao Yin; Thomas Kämpfe; Gerald Gerlach (ESSDERC, 2023)

Hafnium oxide-based Ferroelectric Memories: Are we ready for Application? - Konrad Seidel; David Lehninger; Franz Müller 001; Yannick Raffel; Ayse Sünbül; Ricardo Revello; Raik Hoffmann; Sourav De 002; Thomas Kämpfe; Maximilian Lederer (IMW, 2023)

Demonstration of Differential Mode Ferroelectric Field-Effect Transistor Array-Based in-Memory Computing Macro for Realizing Multiprecision Mixed-Signal Artificial Intelligence Accelerator. - Vivek Parmar; Franz Müller 001; Jing-Hua Hsuen; Sandeep Kaur Kingra; Nellie Laleni; Yannick Raffel; Maximilian Lederer; Alptekin Vardar; Konrad Seidel; Taha Soliman; Tobias Kirchner; Tarek Ali; et al. (Adv. Intell. Syst., 2023)

FeFET based LIF Neuron with Learnable Threshold and Time Constant. - S. Pande; Masud Rana SK; Yannick Raffel; Maximilian Lederer; Konrad Seidel; A. Chakravorty; Sourav De 002; Bhaswar Chakrabarti (DRC, 2024)

Enhanced reliability and trapping behavior in ferroelectric FETs under cryogenic conditions. - Maximilian Lederer; Franz Müller 001; Raik Hoffmann; Ricardo Olivo; Yannick Raffel; Shouzhuo Yang; Sourav De 002; Roman Potjan; Oliver Ostien; Abdelrahman Altawil; Ayse Sünbül; David Lehninger; et al. (IMW, 2024)

Ferroelectric FETs as Embedded NVRAM Supporting Cryogenic Quantum Processors. - Shouzhuo Yang; Yannick Raffel; Ricardo Olivo; Franz Müller 001; Raik Hoffmann; David Lehninger; Oliver Ostien; Maik Simon; Konrad Seidel; Thomas Kämpfe; Maximilian Lederer; Gerald Gerlach (NVMTS, 2024)

Ferroelectric Field Effect Transistors-Based Content-Addressable Storage-Class Memory: A Study on the Impact of Device Variation and High-Temperature Compatibility. - Athira Sunil; Masud Rana SK; Maximilian Lederer; Yannick Raffel; Franz Müller 001; Ricardo Olivo; Raik Hoffmann; Konrad Seidel; Thomas Kämpfe; Bhaswar Chakrabarti; Sourav De 002 (Adv. Intell. Syst., 2024)

Defect Dynamics and Flicker Noise in Ferroelectric Field Effect Transistors at Cryogenic Temperatures. - Shouzhuo Yang; Yannick Raffel; Ricardo Olivo; Raik Hoffmann; David Lehninger; Oliver Ostien; Maik Simon; Konrad Seidel; Thomas Kämpfe; Maximilian Lederer; Gerald Gerlach (IRPS, 2025)