Polysilicon oxide quality optimization at Wafer level of a Bipolar/CMOS/DMOS technology. - Xavier Gagnard; Yannick Rey-Tauriac; Olivier Bonnaud (Microelectron. Reliab., 2001)

Wafer Level Accelerated test for ionic contamination control on VDMOS transistors in Bipolar/CMOS/DMOS. - Yannick Rey-Tauriac; M. Taurin; Olivier Bonnaud (Microelectron. Reliab., 2001)

High reliability power VDMOS Transistors in Bipolar/CMOS/DMOS technology. - Yannick Rey-Tauriac; M. Taurin; Olivier Bonnaud (Microelectron. Reliab., 2001)

Reliability improvement of high value doped polysilicon-based resistors. - E. Carvou; F. Le Bihan; Anne Claire Salaün; R. Rogel; Olivier Bonnaud; Yannick Rey-Tauriac; Xavier Gagnard; L. Roland (Microelectron. Reliab., 2002)

Robustness improvement of VDMOS transistors in Bipolar/CMOS/DMOS technology. - Yannick Rey-Tauriac; Olivier de Sagazan; M. Taurin; Olivier Bonnaud (Microelectron. Reliab., 2003)

Hot-carrier reliability of 20V MOS transistors in 0.13 mum CMOS technology. - Yannick Rey-Tauriac; J. Badoc; B. Reynard; Raúl Andrés Bianchi; D. Lachenal; Alain Bravaix (Microelectron. Reliab., 2005)

Degradation mechanism understanding of NLDEMOS SOI in RF applications. - D. Lachenal; Alain Bravaix; Frederic Monsieur; Yannick Rey-Tauriac (Microelectron. Reliab., 2007)