Single-event upset prediction in static random access memory cell account for parameter variations. - Mingxue Huo; Guoliang Ma; Bin Zhou; Liyi Xiao; Chunhua Qi; Yanqing Zhang 012; Jianning Ma; Yinghun Piao; Tianqi Wang (Sci. China Inf. Sci., 2019)

Design of a high-performance 12T SRAM cell for single event upset tolerance. - Chunhua Qi; Yanqing Zhang 012; Guoliang Ma; Chaoming Liu; Tianqi Wang; Liyi Xiao; Mingxue Huo; Guofu Zhai (Sci. China Inf. Sci., 2021)