Tunneling transistors based on MoS2/MoTe2 Van der Waals heterostructures. - Yashwanth Balaji; Quentin Smets; Cesar J. Lockhart de la Rosa; Anh Khoa Augustin Lu; Daniele Chiappe; Tarun Agarwal; Dennis Lin; Cedric Huyghebaert; Iuliana P. Radu; Dan Mocuta; Guido Groeseneken (ESSDERC, 2017)

Towards high-performance polarity-controllable FETs with 2D materials. - Giovanni V. Resta; Jorge Romero Gonzalez; Yashwanth Balaji; Tarun Agarwal; Dennis Lin; Francky Catthoor; Iuliana P. Radu; Giovanni De Micheli; Pierre-Emmanuel Gaillardon (DATE, 2018)

Doping-free complementary inverter enabled by 2D WSe2 electrostatically-doped reconfigurable transistors. - Giovanni V. Resta; Yashwanth Balaji; Dennis Lin; Iuliana P. Radu; Francky Catthoor; Pierre-Emmanuel Gaillardon; Giovanni De Micheli (DRC, 2018)

Tunnel FETs using Phosphorene/ReS2 heterostructures. - Yashwanth Balaji; Quentin Smets; Dennis Lin; I. Asselberghs; Iuliana P. Radu; Guido Groeseneken (DRC, 2019)

Devices and Circuits Using Novel 2-D Materials: A Perspective for Future VLSI Systems. - Giovanni V. Resta; Alessandra Leonhardt; Yashwanth Balaji; Stefan De Gendt; Pierre-Emmanuel Gaillardon; Giovanni De Micheli (IEEE Trans. Very Large Scale Integr. Syst., 2019)