A 1-Tb 4b/Cell 4-Plane 162-Layer 3D Flash Memory With a 2.4-Gb/s I/O Speed Interface. - Jong Yuh; Jason Li 001; Heguang Li; Yoshihiro Oyama; Cynthia Hsu; Pradeep Anantula; Stanley Jeong; Anirudh Amarnath; Siddhesh Darne; Sneha Bhatia; Tianyu Tang; Aditya Arya; et al. (ISSCC, 2022)

A 1-Tb 4-b/cell 4-Plane 162-Layer 3-D Flash Memory With 2.4-Gb/s IO Interface. - Jonghak Yuh; Yen-Lung Jason Li; Heguang Li; Yoshihiro Oyama; Cynthia Hsu; Pradeep Anantula; Gwang Yeong Stanley Jeong; Anirudh Amarnath; Siddhesh Darne; Sneha Bhatia; Tianyu Tang; Aditya Arya; et al. (IEEE J. Solid State Circuits, 2023)

A 1Tb 3b/cell 3D-Flash Memory with a 29%-Improved-Energy-Efficiency Read Operation and 4.8Gb/s Power-Isolated Low-Tapped-Termination I/Os. - Kosuke Yanagidaira; Mario Sako; Yasuhiro Hirashima; Junya Matsuno; Yumi Higashi; Yutaka Shimizu; Akihiro Imamoto; Kazuaki Kawaguchi; Koji Tabata; Takeshi Nakano; Yusuke Ochi; Hiroaki Hoshino; et al. (ISSCC, 2025)