DC to 10-GHz mixer and amplifier GaAs IC's for coherent optical heterodyne receiver. - Shuichi Fujita; Yuhki Imai; Yasuro Yamane; Hiroshi Fushimi (IEEE J. Solid State Circuits, 1991)

A design technique for a high-gain, 10-GHz class-bandwidth GaAs MESFET amplifier IC module. - Noboru Ishihara; Eiichi Sano; Yuhki Imai; Hiroyuki Kikuchi; Yasuro Yamane (IEEE J. Solid State Circuits, 1992)

Low-power 1: 16 DEMUX and one-chip CDR with 1: 4 DEMUX using InP-InGaAs heterojunction bipolar transistors. - Kiyoshi Ishii; Hideyuki Nosaka; Hiroki Nakajima; Kenji Kurishima; Minoru Ida; Noriyuki Watanabe; Yasurou Yamane; Eiichi Sano; Takatomo Enoki (IEEE J. Solid State Circuits, 2002)

Photoreceiver module using an InP HEMT transimpedance amplifier for over 40 gb/s. - Hiroyuki Fukuyama; Kimikazu Sano; Koichi Murata; Hiroto Kitabayashi; Yasuro Yamane; Takatomo Enoki; Hirohiko Sugahara (IEEE J. Solid State Circuits, 2004)

Low-power InP-HEMT switch ICs integrating miniaturized 2×2 switches for 10-Gb/s systems. - Hideki Kamitsuna; Yasuro Yamane; Masami Tokumitsu; Hirohiko Sugahara; Masahiro Muraguchi (IEEE J. Solid State Circuits, 2006)