A 0.9-V 1T1C SBT-based embedded nonvolatile FeRAM with a reference voltage scheme and multilayer shielded bit-line structure. - Kunisato Yamaoka; Shunichi Iwanari; Yasuo Murakuki; Hiroshige Hirano; Masahiko Sakagami; Tetsuji Nakakuma; Takashi Miki; Yasushi Gohou (IEEE J. Solid State Circuits, 2005)

Reliability Issues in Analog ReRAM Based Neural-Network Processor. - Ryutaro Yasuhara; Takashi Ono; Reiji Mochida; Shunsaku Muraoka; Kazuyuki Kouno; Koji Katayama; Yuriko Hayata; Masayoshi Nakayama; Hitoshi Suwa; Yukio Hayakawa; Takumi Mikawa; Yasushi Gohou; et al. (IRPS, 2019)