A 1.6GB/s DDR2 128Mb chain FeRAM with scalable octal bitline and sensing schemes. - Hidehiro Shiga; Daisaburo Takashima; Shinichiro Shiratake; Katsuhiko Hoya; Tadashi Miyakawa; Ryu Ogiwara; Ryo Fukuda; Ryosuke Takizawa; Kosuke Hatsuda; Fumiyoshi Matsuoka; Yasushi Nagadomi; Daisuke Hashimoto; et al. (ISSCC, 2009)

A 1.6 GB/s DDR2 128 Mb Chain FeRAM With Scalable Octal Bitline and Sensing Schemes. - Hidehiro Shiga; Daisaburo Takashima; Shinichiro Shiratake; Katsuhiko Hoya; Tadashi Miyakawa; Ryu Ogiwara; Ryo Fukuda; Ryosuke Takizawa; Kosuke Hatsuda; Fumiyoshi Matsuoka; Yasushi Nagadomi; Daisuke Hashimoto; et al. (IEEE J. Solid State Circuits, 2010)

A 128 Mb Chain FeRAM and System Design for HDD Application and Enhanced HDD Performance. - Daisaburo Takashima; Yasushi Nagadomi; Kosuke Hatsuda; Yohji Watanabe; Shuso Fujii (IEEE J. Solid State Circuits, 2011)

A 100 MHz Ladder FeRAM Design With Capacitance-Coupled-Bitline (CCB) Cell. - Daisaburo Takashima; Yasushi Nagadomi; Tohru Ozaki (IEEE J. Solid State Circuits, 2011)

A 1.33Tb 4-bit/Cell 3D-Flash Memory on a 96-Word-Line-Layer Technology. - Noboru Shibata; Kazushige Kanda; Takahiro Shimizu; Jun Nakai; Osamu Nagao; Naoki Kobayashi 004; Makoto Miakashi; Yasushi Nagadomi; Takeshi Nakano; Takahisa Kawabe; Taira Shibuya; Mario Sako; et al. (ISSCC, 2019)

A 1.33-Tb 4-Bit/Cell 3-D Flash Memory on a 96-Word-Line-Layer Technology. - Noboru Shibata; Takahisa Kawabe; Taira Shibuya; Mario Sako; Kosuke Yanagidaira; Toshifumi Hashimoto; Hiroki Date; Manabu Sato; Tomoki Nakagawa; Junji Musha; Takatoshi Minamoto; Kazushige Kanda; et al. (IEEE J. Solid State Circuits, 2020)