Time-dependent dielectric breakdown (TDDB) distribution in n-MOSFET with HfSiON gate dielectrics under DC and AC stressing. - Izumi Hirano; Yasushi Nakasaki; Shigeto Fukatsu; Masakazu Goto; Koji Nagatomo; Seiji Inumiya; Katsuyuki Sekine; Yuichiro Mitani; Kikuo Yamabe (Microelectron. Reliab., 2013)

Mechanism of gate dielectric degradation by hydrogen migration from the cathode interface. - Yusuke Higashi; Riichiro Takaishi; Koichi Kato; Masamichi Suzuki; Yasushi Nakasaki; Mitsuhiro Tomita; Yuichiro Mitani; Masuaki Matsumoto; Shohei Ogura; Katsuyuki Fukutani; Kikuo Yamabe (Microelectron. Reliab., 2017)

Study on mechanism of thermal curing in ultra-thin gate dielectrics. - Yuichiro Mitani; Yusuke Higashi; Yasushi Nakasaki (IRPS, 2018)

Impact of specific failure mechanisms on endurance improvement for HfO2-based ferroelectric tunnel junction memory. - Marina Yamaguchi; Shosuke Fujii; Yuuichi Kamimuta; Shoichi Kabuyanagi; Tsunehiro Ino; Yasushi Nakasaki; Riichiro Takaishi; Reika Ichihara; Masumi Saitoh (IRPS, 2018)

Further Investigation on Mechanism of Trap Level Modulation in Silicon Nitride Films by Fluorine Incorporation. - Harumi Seki; Yasushi Nakasaki; Yuichiro Mitani (IRPS, 2020)

Comprehensive Analysis of Hole-Trapping in SiN Films with a Wide Range of Time Constants Based on Dynamic C-V. - Harumi Seki; Reika Ichihara; Yusuke Higashi; Yasushi Nakasaki; Masumi Saitoh; Masamichi Suzuki (IRPS, 2023)