Very low bit rate video coding using arbitrarily shaped region-based motion compensation. - Yutaka Yokoyama; Yasuyuki Miyamoto; Mutsumi Ohta (IEEE Trans. Circuits Syst. Video Technol., 1995)

Current Gain and Voltage Gain in Hot Electron Transistors without Base Layer. - Yasuyuki Miyamoto; Ryo Nakagawa; Issei Kashima; Masashi Ishida; Nobuya Machida; Kazuhito Furuya (IEICE Trans. Electron., 2006)

Numerical Analysis of the Effect of P-Regions on the I-V Kink in GaAs MESFETs. - Kazuya Nishihori; Yasuyuki Miyamoto (IEICE Trans. Electron., 2007)

Estimation of Collector Current Spreading in InGaAs SHBT Having 75-nm-Thick Collector. - Yasuyuki Miyamoto; Shinnosuke Takahashi; Takashi Kobayashi 001; Hiroyuki Suzuki; Kazuhito Furuya (IEICE Trans. Electron., 2010)

Fabrication of InP/InGaAs DHBTs with Buried SiO2 Wires. - Naoaki Takebe; Takashi Kobayashi 001; Hiroyuki Suzuki; Yasuyuki Miyamoto; Kazuhito Furuya (IEICE Trans. Electron., 2011)

Reduction of Access Resistance of InP/InGaAs Composite-Channel MOSFET with Back-Source Electrode. - Atsushi Kato; Toru Kanazawa; Shunsuke Ikeda; Yoshiharu Yonai; Yasuyuki Miyamoto (IEICE Trans. Electron., 2012)

Reduction of Base-Collector Capacitance in InP/InGaAs DHBT with Buried SiO2 Wires. - Naoaki Takebe; Yasuyuki Miyamoto (IEICE Trans. Electron., 2012)

Fabrication of InP/InGaAs SHBT on Si Substrate by Using Transferred Substrate Process. - Yutaro Yamaguchi 004; Takeshi Sagai; Yasuyuki Miyamoto (IEICE Trans. Electron., 2012)

Channel thickness dependence on InGaAs MOSFET with n-InP source for high current density. - Kazuto Ohsawa; Atsushi Kato; Toru Kanazawa; Eiji Uehara; Yasuyuki Miyamoto (IEICE Electron. Express, 2014)

Delay Time Component of InGaAs MOSFET Caused by Dynamic Source Resistance. - Masayuki Yamada; Ken Uchida; Yasuyuki Miyamoto (IEICE Trans. Electron., 2014)

Recent progress in compound semiconductor electron devices. - Yasuyuki Miyamoto (IEICE Electron. Express, 2016)

Vacuum Annealing and Passivation of HfS2 FET for Mitigation of Atmospheric Degradation. - Vikrant Upadhyaya; Toru Kanazawa; Yasuyuki Miyamoto (IEICE Trans. Electron., 2017)

Type-II HfS2/MoS2 Heterojunction Transistors. - Seiko Netsu; Toru Kanazawa; Teerayut Uwanno; Tomohiro Amemiya; Kosuke Nagashio; Yasuyuki Miyamoto (IEICE Trans. Electron., 2018)

Orbital Angular Momentum Mux/Demux Module using Vertically Curved Si Waveguides. - Tomohiro Amemiya; Tomoya Yoshida; Yuki Atsumi; Nobuhiko Nishiyama; Yasuyuki Miyamoto; Youichi Sakakibara; Shigehisa Arai (OFC, 2019)

Simulation of the Short Channel Effect in GaN HEMT with a Combined Thin Undoped Channel and Semi-Insulating Layer. - Yasuyuki Miyamoto; Takahiro Gotow (IEICE Trans. Electron., 2020)

Innovative RF Device Technologies for Advanced Information and Communications Network Society. - Kozo Makiyama; Shigeki Yoshida; Ken Nakata; Yasuyuki Miyamoto (BCICTS, 2022)