Robust ESD self-protected LDNMOSFET by an enhanced displacement-current triggering. - Tzu-Cheng Kao; Chen-Hsin Lien; Chien-Wei Chiu; Jian-Hsing Lee; Yen-Hsiang Lo; Chung-Yu Hung; Tsung-Yi Huang; Hung-Der Su (IRPS, 2015)

Impact of gate-to-source/drain misalignments on source-side injection Schottky barrier charge-trapping memory cells evaluated using numerical programming-trapping iterations. - Chun-Hsing Shih; Yen-Hsiang Lo; Yu-Hsuan Chen; Jr-Jie Tsai (Microelectron. Reliab., 2017)