Degradation of AlGaN/GaN HEMTs under elevated temperature lifetesting. - Yeong-Chang Chou; D. Leung; Ioulia Smorchkova; Mike Wojtowicz; R. Grundbacher; L. Callejo; Q. Kan; R. Lai; P. H. Liu; D. Eng (Microelectron. Reliab., 2004)

Gate metal interdiffusion induced degradation in space-qualified GaAs PHEMTs. - Yeong-Chang Chou; Denise Leung; Ronald Grundbacher; Richard Lai 002; Quin Kan; P. H. Liu; David Eng; Thomas R. Block; Aaron K. Oki (Microelectron. Reliab., 2006)

Sb-Based n- and p-Channel Heterostructure FETs for High-Speed, Low-Power Applications. - J. Brad Boos; Brian R. Bennett; Nicolas A. Papanicolaou; Mario G. Ancona; James G. Champlain; Yeong-Chang Chou; Michael D. Lange; Jeffrey M. Yang; Robert Bass 002; Doewon Park; Ben V. Shanabrook (IEICE Trans. Electron., 2008)