Digital and Analog Switching Characteristics of InGaZnO Memristor Depending on Top Electrode Material for Neuromorphic System. - Jun Tae Jang; Jungi Min; Yeongjin Hwang; Sung-Jin Choi; Dong Myong Kim; Hyungjin Kim 001; Dae Hwan Kim (IEEE Access, 2020)

4-bit Multilevel Operation in Overshoot Suppressed Al2O3/TiOx Resistive Random-Access Memory Crossbar Array. - Sungjoon Kim; Jinwoo Park; Tae-Hyeon Kim; Kyungho Hong; Yeongjin Hwang; Byung-Gook Park; Hyungjin Kim 001 (Adv. Intell. Syst., 2022)

Threshold learning algorithm for memristive neural network with binary switching behavior. - Sangwook Youn; Yeongjin Hwang; Tae-Hyeon Kim; Sungjoon Kim; Hwiho Hwang; Jinwoo Park; Hyungjin Kim 001 (Neural Networks, 2024)