Breakdown and reliability of p-MOS devices with stacked RPECVD oxide/nitride gate dielectric under constant voltage stress. - Yi-Mu Lee; Yider Wu; Gerald Lucovsky (Microelectron. Reliab., 2004)

Latchup-reliability Impact of High-Voltage nLDMOSs with the Parasitic Schottky Area Modulation in the Source Side. - Ting-En Lin; Shen-Li Chen; Xiu-Yuan Yang; Hung-Wei Chen; Yi-Mu Lee (ICCE-Taiwan, 2024)

ESD/Latch-up Immunities Enhancements of HV NLDMOSs by the Embedded Discrete SCR/Schottky Alternating Arrangement Design at the Drain Side. - Xiu-Yuan Yang; Shen-Li Chen; Ting-En Lin; Hung-Wei Chen; Yi-Mu Lee (ICCE-Taiwan, 2024)