A 40-nm Resilient MLC RRAM Macro with Self-Referenced Time-Based Readout and 3-Bit Interleaved ECC Achieving 0.22 pJ/bit Read Energy. - Junjie He; Zhen Kong; Yida Liang; Humiao Li; Yida Li 004; Jiamin Li; Longyang Lin (ISCAS, 2026)

Mitigating Conductance Drift via In-Situ Calibration for Reliable RRAM-Based CIM Edge Inference. - Zhen Kong; Weirong Dong; Junjie He; Zhengke Yang; Jun Lan; Yida Liang; Jiamin Li; Yida Li 004; Longyang Lin (ISCAS, 2026)