3-bits-per-cell 2T32CFE nvTCAM by Angstrom-laminated Ferroelectric Layers with 10¹¹ Cycles of Endurance and 4.92V of Ultra-wide Memory-windows for In-memory-searching. - E. R. Hsieh; Ying-Tsan Tang; Cheng-Rui Liu; Sheng-Min Wang; Y. L. Hsueh; R. Q. Lin; Y. X. Huang; Yu-Ting Chen (VLSI Technology and Circuits, 2023)