Two-step gate-recess process combining selective wet-etching and digital wet-etching for InAlAs/InGaAs InP-based HEMTs. - Yinghui Zhong; Shu-xiang Sun; Wen-bin Wong; Haili Wang; Xiao-Ming Liu; Zhiyong Duan; Peng Ding; Zhi Jin (Frontiers Inf. Technol. Electron. Eng., 2017)

一种基于梯度提升回归树的系外行星宜居性预测方法 (Habitability Prediction of Exoplanets Based on GBRT Algorithm). - Weijun Zhu; Xin Wang; Yinghui Zhong; Yongwen Fan; Yonghua Chen (计算机科学, 2019)

Intrinsic point defects investigation in InAlAs with extrapolated defect transition level. - Yuxin Fang; Jialin Zhang; Yongbo Su; Zhi Jin; Yinghui Zhong (Microelectron. J., 2024)

A behavioral model for electron irradiation effect on the DC performance in InP-based HEMT. - S. H. Meng; X. L. Han; Peng Ding; B. Mei; Yongbo Su; Jialin Zhang; H. Q. Yun; Zhi Jin; Yinghui Zhong (Microelectron. J., 2024)

Radiation effects modeling of InP-based HEMT based on neural networks. - Yinghui Zhong; X. L. Han; H. Q. Yun; B. Mei; Yongbo Su; Zhi Jin; C. Zhang (Microelectron. J., 2024)