Comparison of single-event upset generated by heavy ion and pulsed laser. - Bin Liang; Ruiqiang Song; Jianwei Han; Yaqing Chi; Rui Chen; Chunmei Hu; Jianjun Chen; Yingqi Ma; Shipeng Shangguan (Sci. China Inf. Sci., 2017)

Research on the influences of well structure on dose rate effects in 65nm CMOS circuit. - Qian Chen; Jianwei Han; Yingqi Ma; Sai Li; Jingtian Liu; Yaqing Chi; Bin Liang (IEICE Electron. Express, 2020)

Study on the single-event upset sensitivity of 65-nm CMOS sequential logic circuit. - Sai Li; Jianwei Han; Rui Chen; Shipeng Shangguan; Yingqi Ma; Xuan Wang (IEICE Electron. Express, 2020)

Design of Integrated Circuit Hard Defect Location System Based on Thermal Laser Stimulation. - Wenjian Wu; Yingqi Ma; Minghui Cai (APCCAS, 2022)

Design of SEL Self-Recovery Hardness for 90nm COTS Devices Using R-C-S Network with DC-DC Converter. - Jindou Xin; Xiang Zhu; Yingqi Ma; Jianwei Han (APCCAS, 2022)