Complete Reconfigurable Boolean Logic Gates Based on One FeFET -One RRAM Technology. - Yiqin Zeng; Zhetao Ding; Xueyang Li; Minglei Ma; Yue Peng; Rongzong Shen; Gaobo Lin; Chengji Jin; Xiao Yu; Bing Chen; Ran Cheng; Genquan Han (ESSDERC, 2023)

Investigation of Read Disturb for Hf0.5Zr0.502 Ferroelectric Field-Effect Transistors Based Neuromorphic Applications. - Xinze Li; Yiqin Zeng; Yuxuan Wu; Ying Sun; Junru Qu; Chengji Jin; Jiani Gu; Rongzong Shen; Gaobo Lin; Dawei Gao; Xiao Yu; Bing Chen; et al. (IRPS, 2024)