Perpendicular Recording Technology: From Research to Commercialization. - Yoichiro Tanaka (Proc. IEEE, 2008)

A 130.7mm2 2-layer 32Gb ReRAM memory device in 24nm technology. - Tz-Yi Liu; Tian Hong Yan; Roy Scheuerlein; Yingchang Chen; Jeffrey KoonYee Lee; Gopinath Balakrishnan; Gordon Yee; Henry Zhang; Alex Yap; Jingwen Ouyang; Takahiko Sasaki; Sravanti Addepalli; et al. (ISSCC, 2013)

A 130.7-mm2 2-Layer 32-Gb ReRAM Memory Device in 24-nm Technology. - Tz-Yi Liu; Tian Hong Yan; Roy Scheuerlein; Yingchang Chen; Jeffrey KoonYee Lee; Gopinath Balakrishnan; Gordon Yee; Henry Zhang; Alex Yap; Jingwen Ouyang; Takahiko Sasaki; Ali Al-Shamma; et al. (IEEE J. Solid State Circuits, 2014)