Emerging Non-Volatile Memory and Thin-Film Transistor Technologies for Future 3D-LSI. - Masumi Saitoh; Shosuke Fujii; Minoru Oda; Marina Yamaguchi; Shoichi Kabuyanagi; Yoko Yoshimura; Kensuke Ota; Kiwamu Sakuma; Yuuichi Kamimuta (ESSDERC, 2018)

Hot carrier degradation, TDDB, and 1/f noise in Poly-Si Tri-gate nanowire transistor. - Yoko Yoshimura; Kensuke Ota; Masumi Saitoh (IRPS, 2018)

Ag Ionic Memory Cell Technology for Terabit-Scale High-DensityApplication. - Shosuke Fujii; Reika Ichihara; Takuya Konno; Marina Yamaguchi; Harumi Seki; Hiroki Tanaka; Dandan Zhao; Yoko Yoshimura; Masumi Saitoh; Masato Koyama (VLSI Circuits, 2019)

Novel Operation Scheme for Suppressing Disturb in HfO2-based FeFET Considering Charge- Trapping-Coupled Polarization Dynamics. - Takamasa Hamai; Kunifumi Suzuki; Reika Ichihara; Yusuke Higashi; Yoko Yoshimura; Kiwamu Sakuma; Kensuke Ota; Kota Takahashi; Kazuhiro Matsuo; Shosuke Fujii; Masumi Saitoh (IRPS, 2023)

Cycling Induced Imprint Phenomenon at Intermediate State used for Multi-Level Operation in HfO2-FeFET. - Viktoria Schlykow; Kunifumi Suzuki; Yoko Yoshimura; Hidesato Ishida; Kiwamu Sakuma; Kazuhiro Matsuo; Masumi Saitoh; Reika Ichihara (IRPS, 2025)