A 31 ns Random Cycle VCAT-Based 4F 2 DRAM With Manufacturability and Enhanced Cell Efficiency. - Ki-Whan Song; Jinyoung Kim; Jae-Man Yoon; Sua Kim; Huijung Kim; Hyun-Woo Chung; Hyungi Kim; Kanguk Kim; Hwan-Wook Park; Hyun Chul Kang; Nam-Kyun Tak; Dukha Park; et al. (IEEE J. Solid State Circuits, 2010)

Novel Deep Trench Buried-Body-Contact (DBBC) of 4F2 cell for sub 30nm DRAM technology. - Youngseung Cho; Yoosang Hwang; Huijung Kim; Eunok Lee; Soojin Hong; Hyun-Woo Chung; Daeik Kim; Jinyoung Kim; Yong Chul Oh; Hyeongsun Hong; Gyo-Young Jin; Chilhee Chung (ESSDERC, 2012)