A 64Gb 533Mb/s DDR interface MLC NAND Flash in sub-20nm technology. - Daeyeal Lee; Ik Joon Chang; Sangyong Yoon; Joonsuc Jang; Dong-Su Jang; Wook-Ghee Hahn; Jong-Yeol Park; Doo-Gon Kim; Chiweon Yoon; Bong-Soon Lim; ByungJun Min; Sung-Won Yun; et al. (ISSCC, 2012)

Adaptive Multi-Pulse Program Scheme Based on Tunneling Speed Classification for Next Generation Multi-Bit/Cell NAND FLASH. - Yong-Sung Cho; Il-Han Park; Sangyong Yoon; Nam-Hee Lee; Sang-Hyun Joo; Ki-Whan Song; Kihwan Choi; Jin-Man Han; Kyehyun Kyung; Young-Hyun Jun (IEEE J. Solid State Circuits, 2013)

7.1 256Gb 3b/cell V-NAND flash memory with 48 stacked WL layers. - Dongku Kang; Woopyo Jeong; Chulbum Kim; Doo-Hyun Kim; Yong-Sung Cho; Kyung-Tae Kang; Jinho Ryu; Kyung-Min Kang; Sungyeon Lee; Wandong Kim; Hanjun Lee; Jaedoeg Yu; et al. (ISSCC, 2016)

256 Gb 3 b/Cell V-nand Flash Memory With 48 Stacked WL Layers. - Dongku Kang; Woopyo Jeong; Chulbum Kim; Doo-Hyun Kim; Yong-Sung Cho; Kyung-Tae Kang; Jinho Ryu; Kyung-Min Kang; Sungyeon Lee; Wandong Kim; Hanjun Lee; Jaedoeg Yu; et al. (IEEE J. Solid State Circuits, 2017)

Convolutional-Neural-Network-Based Partial Discharge Diagnosis for Power Transformer Using UHF Sensor. - The-Duong Do; Vo-Nguyen Tuyet-Doan; Yong-Sung Cho; Jong-Ho Sun; Yong-Hwa Kim (IEEE Access, 2020)