A 32Gb MLC NAND-flash memory with Vth-endurance-enhancing schemes in 32nm CMOS. - Changhyuk Lee; Sok-Kyu Lee; Sunghoon Ahn; Jinhaeng Lee; Wonsun Park; Yongdeok Cho; Chaekyu Jang; Chulwoo Yang; Sanghwa Chung; In-Suk Yun; Byoungin Joo; Byoungkwan Jeong; et al. (ISSCC, 2010)

A 32-Gb MLC NAND Flash Memory With Vth Endurance Enhancing Schemes in 32 nm CMOS. - Changhyuk Lee; Sok-Kyu Lee; Sunghoon Ahn; Jinhaeng Lee; Wonsun Park; Yongdeok Cho; Chaekyu Jang; Chulwoo Yang; Sanghwa Chung; In-Suk Yun; Byoungin Joo; Byoungkwan Jeong; et al. (IEEE J. Solid State Circuits, 2011)

A 1.1V 2y-nm 4.35Gb/s/pin 8Gb LPDDR4 mobile device with bandwidth improvement techniques. - Keunsoo Song; Sangkwon Lee; Dongkyun Kim; Youngbo Shim; Sangil Park; Bokrim Ko; Duckhwa Hong; Yongsuk Joo; Wooyoung Lee; Yongdeok Cho; Wooyeol Shin; Jaewoong Yun; et al. (CICC, 2014)

A 1.1 V 2y-nm 4.35 Gb/s/pin 8 Gb LPDDR4 Mobile Device With Bandwidth Improvement Techniques. - Keunsoo Song; Sangkwon Lee; Dongkyun Kim; Youngbo Shim; Sangil Park; Bokrim Ko; Duckhwa Hong; Yongsuk Joo; Wooyoung Lee; Yongdeok Cho; Wooyeol Shin; Jaewoong Yun; et al. (IEEE J. Solid State Circuits, 2015)