Parallel synaptic design of ferroelectric tunnel junctions for neuromorphic computing. - Taehwan Moon; Hyun Jae Lee; Seung-Geol Nam; Hagyoul Bae; Duk-Hyun Choe; Sanghyun Jo; Yunseong Lee; Yoonsang Park; J. Joshua Yang; Jinseong Heo (Neuromorph. Comput. Eng., 2023)

Highly Enhanced Memory Window of 17.8V in Ferroelectric FET with IGZO Channel via Introduction of Intermediate Oxygen-Deficient Channel and Gate Interlayer. - Sijung Yoo; Donghoon Kim; Duk-Hyun Choe; Hyun Jae Lee; Yunseong Lee; Sanghyun Jo; Yoonsang Park; Ki Hong Kim; Kyooho Jung; Moonil Jung; Kwang-Hee Lee; Jee-Eun Yang; et al. (VLSI Technology and Circuits, 2024)