Ultra high frequency integrated circuits using transferred substrate heterojunction bipolar transistors. - Mark J. W. Rodwell; Q. Lee; Dino Mensa; J. Guthrie; Yoram Betser; Suzanne C. Martin; R. P. Smith; S. Jaganathan; Thomas Mathew; P. Krishnan; C. Serhan; Stephen I. Long (ISCAS (2), 1999)

An 18-GHz continuous-time Σ-Δ analog-digital converter implemented in InP-transferred substrate HBT technology. - Shrinivasan Jaganathan; Sundararajan Krishnan; Dino Mensa; Thomas Mathew; Yoram Betser; Yun Wei; Dennis W. Scott; Miguel Urteaga; Mark J. W. Rodwell (IEEE J. Solid State Circuits, 2001)

A 4b/cell NROM 1Gb Data-Storage Memory. - Yan Polansky; Avi Lavan; Ran Sahar; Oleg Dadashev; Yoram Betser; Guy Cohen; Eduardo Maayan; Boaz Eitan; Ful-Long Ni; Yen-Hui Joseph Ku; Chih-Yuan Lu; Tim Chang-Ting Chen; et al. (ISSCC, 2006)

A 4b/Cell 8Gb NROM Data-Storage Memory with Enhanced Write Performance. - Ran Sahar; Avi Lavan; Eran Geyari; Amit Berman; Itzic Cohen; Ori Tirosh; Kobi Danon; Yair Sofer; Yoram Betser; Amichai Givant; Alexander Kushnarenko; Yaal Horesh; et al. (ISSCC, 2008)