New DRAM noise generation under half-Vcc precharge and its reduction using a transposed amplifier. - Masakazu Aoki; Shin'ichi Ikenaga; Yoshinobu Nakagome; Masashi Horiguchi; Yasushi Kawase; Yoshifumi Kawamoto; Kiyoo Itoh 001 (IEEE J. Solid State Circuits, 1989)

A 1.5-V DRAM for battery-based applications. - Masakazu Aoki; Jun Etoh; Kiyoo Itoh 001; Shin Kimura; Yoshifumi Kawamoto (IEEE J. Solid State Circuits, 1989)

An experimental 1.5-V 64-Mb DRAM. - Yoshinobu Nakagome; Hitoshi Tanaka; Kan Takeuchi; Eiji Kume; Yasushi Watanabe; Toru Kaga; Yoshifumi Kawamoto; Fumio Murai; Ryuichi Izawa; Digh Hisamoto; Teruaki Kisu; Takashi Nishida; et al. (IEEE J. Solid State Circuits, 1991)

Circuit techniques for 1.5-3.6-V battery-operated 64-Mb DRAM. - Yoshinobu Nakagome; Kiyoo Itoh 001; Kan Takeuchi; Eiji Kume; Hitoshi Tanaka; Masanori Isoda; Tatsunori Musha; Toru Kaga; Teruaki Kisu; Takashi Nishida; Yoshifumi Kawamoto; Masakazu Aoki (IEEE J. Solid State Circuits, 1991)

A circuit technology for sub-10-ns ECL 4-Mb BiCMOS DRAM's. - Takayuki Kawahara; Yoshiki Kawajiri; Goro Kitsukawa; Yoshinobu Nakagome; Kazuhiko Sagara; Yoshifumi Kawamoto; Takesada Akiba; Shisei Kato; Yasushi Kawase; Kiyoo Itoh 001 (IEEE J. Solid State Circuits, 1991)

A block-oriented RAM with half-sized DRAM cell and quasi-folded data-line architecture. - Katsutaka Kimura; Takeshi Sakata; Kiyoo Itoh 001; Toru Kaga; Takashi Nishida; Yoshifumi Kawamoto (IEEE J. Solid State Circuits, 1991)

Deep-submicrometer BiCMOS circuit technology for sub-10-ns ECL 4-Mb DRAM's. - Takayuki Kawahara; Yoshiki Kawajiri; Goro Kitsukawa; Kazuhiko Sagara; Yoshifumi Kawamoto; Takesada Akiba; Shisei Kato; Yasushi Kawase; Kiyoo Itoh 001 (IEEE J. Solid State Circuits, 1992)