K-Band AlGaN/GaN MIS-HFET on Si with High Output Power over 10 W. - Noboru Negoro; Masayuki Kuroda; Tomohiro Murata; Masaaki Nishijima; Yoshiharu Anda; Hiroyuki Sakai 001; Tetsuzo Ueda; Tsuyoshi Tanaka (IEICE Trans. Electron., 2012)