A 56nm CMOS 99mm2 8Gb Multi-level NAND Flash Memory with 10MB/s Program Throughput. - Ken Takeuchi; Yasushi Kameda; Susumu Fujimura; Hiroyuki Otake; Koji Hosono; Hitoshi Shiga; Yoshihisa Watanabe; Takuya Futatsuyama; Yoshihiko Shindo; Masatsugu Kojima; Makoto Iwai; Masanobu Shirakawa; et al. (ISSCC, 2006)

Wireless IP Access System (WIPAS) -Broadband Access System by "fiber + radio". - Tomotaka Yoshie; Hiroki Yoshioka; Yoshihiko Shindo (PIMRC, 2006)

A 56-nm CMOS 99-mm2 8-Gb Multi-Level NAND Flash Memory With 10-MB/s Program Throughput. - Ken Takeuchi; Yasushi Kameda; Susumu Fujimura; Hiroyuki Otake; Koji Hosono; Hitoshi Shiga; Yoshihisa Watanabe; Takuya Futatsuyama; Yoshihiko Shindo; Masatsugu Kojima; Makoto Iwai; Masanobu Shirakawa; et al. (IEEE J. Solid State Circuits, 2007)

Advanced Wireless IP Access System (WIPAS) for fixed wireless access (FWA) - broadband access system for triple play services by "fiber + radio" -. - Tomotaka Yoshie; Mitsuru Nishino; Yasunari Takahata; Yoshihiko Shindo (PIMRC, 2008)

Advanced Wireless IP Access System (WIPAS) for Higher Speed and Real-Time Communication Services. - Kiyohiko Itokawa; Toru Nishikawa; Akira Matsushita; Mitsuru Nishino; Yasunari Takahata; Yoshihiko Shindo (GLOBECOM, 2009)

A 113mm2 32Gb 3b/cell NAND flash memory. - Takuya Futatsuyama; Norihiro Fujita; Naoya Tokiwa; Yoshihiko Shindo; Toshiaki Edahiro; Teruhiko Kamei; Hiroaki Nasu; Makoto Iwai; Koji Kato; Yasuyuki Fukuda; Naoaki Kanagawa; Naofumi Abiko; et al. (ISSCC, 2009)

A 151mm2 64Gb MLC NAND flash memory in 24nm CMOS technology. - Koichi Fukuda; Yoshihisa Watanabe; Eiichi Makino; Koichi Kawakami; Jumpei Sato; Teruo Takagiwa; Naoaki Kanagawa; Hitoshi Shiga; Naoya Tokiwa; Yoshihiko Shindo; Toshiaki Edahiro; Takeshi Ogawa; et al. (ISSCC, 2011)

A 151-mm2 64-Gb 2 Bit/Cell NAND Flash Memory in 24-nm CMOS Technology. - Koichi Fukuda; Yoshihisa Watanabe; Eiichi Makino; Koichi Kawakami; Jumpei Sato; Teruo Takagiwa; Naoaki Kanagawa; Hitoshi Shiga; Naoya Tokiwa; Yoshihiko Shindo; Takeshi Ogawa; Toshiaki Edahiro; et al. (IEEE J. Solid State Circuits, 2012)

A 512Gb 3b/Cell 3D flash memory on a 96-word-line-layer technology. - Hiroshi Maejima; Kazushige Kanda; Susumu Fujimura; Teruo Takagiwa; Susumu Ozawa; Jumpei Sato; Yoshihiko Shindo; Manabu Sato; Naoaki Kanagawa; Junji Musha; Satoshi Inoue; Katsuaki Sakurai; et al. (ISSCC, 2018)