Proximity Gettering Design of Hydrocarbon-Molecular-Ion-Implanted Silicon Wafers Using Dark Current Spectroscopy for CMOS Image Sensors. - Kazunari Kurita; Takeshi Kadono; Satoshi Shigematsu; Ryo Hirose; Ryosuke Okuyama; Ayumi Onaka-Masada; Hidehiko Okuda; Yoshihiro Koga (Sensors, 2019)

Reduction of Dark Current in CMOS Image Sensor Pixels Using Hydrocarbon-Molecular-Ion-Implanted Double Epitaxial Si Wafers. - Ayumi Onaka-Masada; Takeshi Kadono; Ryosuke Okuyama; Ryo Hirose; Koji Kobayashi; Akihiro Suzuki; Yoshihiro Koga; Kazunari Kurita (Sensors, 2020)

Reduction of White Spot Defects in CMOS Image Sensors Fabricated Using Epitaxial Silicon Wafer with Proximity Gettering Sinks by CH2P Molecular Ion Implantation. - Takeshi Kadono; Ryo Hirose; Ayumi Onaka-Masada; Koji Kobayashi; Akihiro Suzuki; Ryosuke Okuyama; Yoshihiro Koga; Atsuhiko Fukuyama; Kazunari Kurita (Sensors, 2022)