A 300-MHz 25-μA/Mb-leakage on-chip SRAM module featuring process-variation immunity and low-leakage-active mode for mobile-phone application processor. - Masanao Yamaoka; Yoshihiro Shinozaki; Noriaki Maeda; Yasuhisa Shimazaki; Kei Kato; Shigeru Shimada; Kazumasa Yanagisawa; Kenichi Osada (IEEE J. Solid State Circuits, 2005)

90-nm process-variation adaptive embedded SRAM modules with power-line-floating write technique. - Masanao Yamaoka; Noriaki Maeda; Yoshihiro Shinozaki; Yasuhisa Shimazaki; Koji Nii; Shigeru Shimada; Kazumasa Yanagisawa; Takayuki Kawahara (IEEE J. Solid State Circuits, 2006)