A 34-ns 16-Mb DRAM with controllable voltage down-converter. - Hideto Hidaka; Kazutami Arimoto; Kazutoshi Hirayama; Masanori Hayashikoshi; Mikio Asakura; Masaki Tsukude; Tsukasa Oishi; Shinji Kawai; Katsuhiro Suma; Yasuhiro Konishi; Koji Tanaka; Wataru Wakamiya; et al. (IEEE J. Solid State Circuits, 1992)

An experimental 256-Mb DRAM with boosted sense-ground scheme. - Mikio Asakura; Tsukasa Ooishi; Masaki Tsukude; Shigeki Tomishima; Takahisa Eimori; Hideto Hidaka; Yoshikazu Ohno; Kazutani Arimoto; Kazuyasu Fujishima; Tadashi Nishimura; Tsutomu Yoshihara (IEEE J. Solid State Circuits, 1994)