Effects of base layer thickness on reliability of CVD Si3N4 stack gate dielectrics. - Koji Eriguchi; Yoshinao Harada; Masaaki Niwa (Microelectron. Reliab., 2001)

Effects of the sputtering deposition process of metal gate electrode on the gate dielectric characteristics. - Takayuki Yamada; Masaru Moriwaki; Yoshinao Harada; Shinji Fujii; Koji Eriguchi (Microelectron. Reliab., 2001)