Bias-stress-induced increase in parasitic resistance of InP-based InAlAs/InGaAs HEMTs. - Tetsuya Suemitsu; Yoshino K. Fukai; Hiroki Sugiyama; Kazuo Watanabe; Haruki Yokoyama (Microelectron. Reliab., 2002)

Improved stability in wide-recess InP HEMTs by means of a fully passivated two-step-recess gate. - Tetsuya Suemitsu; Yoshino K. Fukai; Masami Tokumitsu; Fabiana Rampazzo; Gaudenzio Meneghesso; Enrico Zanoni (IEICE Electron. Express, 2006)

Highly Reliable Submicron InP-Based HBTs with over 300-GHz ft. - Norihide Kashio; Kenji Kurishima; Yoshino K. Fukai; Shoji Yamahata (IEICE Trans. Electron., 2008)

Emitter-metal-related degradation in InP-based HBTs operating at high current density and its suppression by refractory metal. - Yoshino K. Fukai; Kenji Kurishima; Norihide Kashio; Minoru Ida; Shoji Yamahata; Takatomo Enoki (Microelectron. Reliab., 2009)

Performance of InP/InGaAs HBTs with a Thin Highly N-Type Doped Layer in the Emitter-Base Heterojunction Vicinity. - Kenji Kurishima; Minoru Ida; Norihide Kashio; Yoshino K. Fukai (IEICE Trans. Electron., 2012)