A 65nm Silicon-on-Thin-Box (SOTB) Embedded 2T-MONOS Flash Achieving 0.22 pJ/bit Read Energy with 64 MHz Access for IoT Applications. - Ken Matsubara; Tsutomu Nagasawa; Yoshinobu Kaneda; Hidenori Mitani; Hiroshi Sato; Takashi Iwase; Yasunobu Aoki; Keiichi Maekawa; Hideaki Yamakoshi; Takashi Ito; Hiroyuki Kondo; Takashi Kono (VLSI Circuits, 2019)

A 40nm Embedded SG-MONOS Flash Macro for High-end MCU Achieving 200MHz Random Read Operation and 7.91Mb/mm2 Density with Charge Assisted Offset Cancellation Sense Amplifier. - Masaya Nakano; Yoshinobu Kaneda; Koichi Takeda; Takahiro Shimoi; Yasunobu Aoki; Satoru Nakanishi; Yosuke Tashiro; Yasuhiko Taito; Ken Matsubara; Munekatsu Nakagawa; Tomoya Ogawa; Takashi Kurafuji; et al. (A-SSCC, 2021)

A 22nm 32Mb Embedded STT-MRAM Macro Achieving 5.9ns Random Read Access and 5.8MB/s Write Throughput at up to Tj of 150 °C. - Takahiro Shimoi; Ken Matsubara; Tomoya Saito; Tomoya Ogawa; Yasuhiko Taito; Yoshinobu Kaneda; Masayuki Izuna; Koichi Takeda; Hidenori Mitani; Takashi Ito; Takashi Kono (VLSI Technology and Circuits, 2022)

A 40-nm Embedded SG-MONOS Flash Macro for High-End MCU Achieving 200-MHz Random Read Operation and 7.91-Mb/mm2 Density With Charge-Assisted Offset Cancellation Sense Amplifier. - Masaya Nakano; Yoshinobu Kaneda; Satoru Nakanishi; Yasumitsu Murai; Yosuke Tashiro; Yasuhiko Taito; Tomoya Ogawa; Hidenori Mitani; Takashi Ito; Takashi Kono (IEEE J. Solid State Circuits, 2022)

15.8 A 22nm 10.8Mb Embedded STT-MRAM Macro Achieving over 200MHz Random-Read Access and a 10.4MB/s Write Throughput with an In-Field Programmable 0.3Mb MTJ-OTP for High-End MCUs. - Tomoya Ogawa; Ken Matsubara; Yasuhiko Taito; Tomoya Saito; Masayuki Izuna; Koichi Takeda; Yoshinobu Kaneda; Takahiro Shimoi; Hidenori Mitani; Takashi Ito; Takashi Kono (ISSCC, 2024)

A 22-nm 32-Mb Embedded STT-MRAM Macro Achieving 5.9-ns Random Read Access and 7.4-MB/s Write Throughput at up to 150 °C. - Takahiro Shimoi; Ken Matsubara; Tomoya Saito; Tomoya Ogawa; Yasuhiko Taito; Yoshinobu Kaneda; Masayuki Izuna; Koichi Takeda; Hidenori Mitani; Takashi Ito; Takashi Kono (IEEE J. Solid State Circuits, 2024)