Limits of integrated-circuit manufacturing. - Robert Doering; Yoshio Nishi (Proc. IEEE, 2001)

On the forming-free operation of HfOx based RRAM devices: Experiments and ab initio calculations. - Boubacar Traore; Elisa Vianello; Gabriel Molas; Marc Gely; Jean-François Nodin; Eric Jalaguier; Philippe Blaise; Barbara De Salvo; Leonardo R. C. Fonseca; Kanhao Xue; Yoshio Nishi (ESSDERC, 2013)

First principles modeling of charged oxygen vacancy filaments in reduced TiO2-implications to the operation of non-volatile memory devices. - Liang Zhao; Seong-Geon Park; Blanka Magyari-Köpe; Yoshio Nishi (Math. Comput. Model., 2013)

Ab initio modeling of resistive switching mechanism in binary metal oxides. - Blanka Magyari-Köpe; Liang Zhao; Yoshio Nishi; Katsumasa Kamiya; Moon Young Yang; Kenji Shiraishi (ISCAS, 2014)

A CMOS-compatible boosted transistor having >2× drive current and low leakage current. - Jin-Woo Han; Victor Moroz; Andrey Kucherov; Dinesh Maheshwari; Valentin Abramzon; Zvi Or-Bach; Yoshio Nishi; Yuniarto Widjaja (ESSDERC, 2016)