High-Power GaN HEMT T/R Switch Using Asymmetric Series-Shunt/Shunt Configuration. - Masatake Hangai; Yukinobu Tarui; Yoshitaka Kamo; Morishige Hieda; Masatoshi Nakayama (IEICE Trans. Electron., 2011)

Decrease in on-state gate current of AlGaN/GaN HEMTs by recombination-enhanced defect reaction of generated hot carriers investigated by TCAD simulation. - Hajime Sasaki; Kaoru Kadoiwa; Hidetoshi Koyama; Yoshitaka Kamo; Yoshitsugu Yamamoto; Toshiyuki Oishi; Kazuo Hayashi (Microelectron. Reliab., 2014)

X-Band GaN Chipsets for Cost-Effective 20W T/R Modules. - Jun Kamioka; Yoshifumi Kawamura; Ryota Komaru; Masatake Hangai; Yoshitaka Kamo; Tetsuo Kodera; Shintaro Shinjo (IEICE Trans. Electron., 2022)