A 0.24-μm 2.0-V 1T1MTJ 16-kb nonvolatile magnetoresistance RAM with self-reference sensing scheme. - Gitae Jeong; Wooyoung Cho; Sujin Ahn; Hongsik Jeong; Gwanhyeob Koh; Youngnam Hwang; Kinam Kim (IEEE J. Solid State Circuits, 2003)

A 0.18-μm 3.0-V 64-Mb nonvolatile phase-transition random access memory (PRAM). - Woo Yeong Cho; Beak-Hyung Cho; Byung-Gil Choi; Hyung-Rok Oh; Sangbeom Kang; Ki-Sung Kim; Kyung-Hee Kim; Du-Eung Kim; Choong-Keun Kwak; Hyun-Geun Byun; Youngnam Hwang; SuJin Ahn; et al. (IEEE J. Solid State Circuits, 2005)