A Low Power and Area Scalable High Voltage Switch Technique for Low Operation Voltage in MLC NAND Flash Memory. - Myounggon Kang; Ki-Tae Park; Youngsun Song; Sungsoo Lee; Yunheub Song; Youngho Lim (IEICE Trans. Electron., 2010)

Boosted Bit Line Program Scheme for Low Operating Voltage MLC NAND Flash Memory. - Youngsun Song; Ki-Tae Park; Myounggon Kang; Yunheub Song; Sungsoo Lee; Youngho Lim; Kang-Deog Suh (IEICE Trans. Electron., 2010)

Dynamic Vpass Controlled Program Scheme and Optimized Erase Vth Control for High Program Inhibition in MLC NAND Flash Memories. - Ki-Tae Park; Youngsun Song; Myounggon Kang; Sungsoo Lee; Youngho Lim; Kang-Deog Suh; Chilhee Chung (IEEE J. Solid State Circuits, 2010)

A new 3-bit programming algorithm using SLC-to-TLC migration for 8MB/s high performance TLC NAND flash memory. - Seung-Hwan Shin; Dong-Kyo Shim; Jaeyong Jeong; Ohsuk Kwon; Sangyong Yoon; Myung-Hoon Choi; Tae-Young Kim; Hyun Wook Park; Hyun-Jun Yoon; Youngsun Song; Yoon-Hee Choi; Sang-Won Shim; et al. (VLSIC, 2012)

Flashdefibrillator: a data recovery technique for retention failures in NAND flash memory. - Jaeyong Jeong; Youngsun Song; Jihong Kim 001 (NVMSA, 2015)

Improving performance and lifetime of NAND storage systems using relaxed program sequence. - Jisung Park 001; Jaeyong Jeong; Sungjin Lee 001; Youngsun Song; Jihong Kim 001 (DAC, 2016)

Dynamic Erase Voltage and Time Scaling for Extending Lifetime of NAND Flash-Based SSDs. - Jaeyong Jeong; Youngsun Song; Sangwook Shane Hahn; Sungjin Lee 001; Jihong Kim 001 (IEEE Trans. Computers, 2017)

SARO: A State-Aware Reliability Optimization Technique for High Density NAND Flash Memory. - Myungsuk Kim; Youngsun Song; Myoungsoo Jung; Jihong Kim 001 (ACM Great Lakes Symposium on VLSI, 2018)

13.1 A 1Tb 4b/cell NAND Flash Memory with tPROG=2ms, tR=110µs and 1.2Gb/s High-Speed IO Rate. - Doo-Hyun Kim; Hyunggon Kim; Sung-Won Yun; Youngsun Song; Jisu Kim; Sung-Min Joe; Kyung-Hwa Kang; Joonsuc Jang; Hyun-Jun Yoon; Kangbin Lee; Minseok Kim; Joonsoo Kwon; et al. (ISSCC, 2020)

A 1Tb 3b/Cell 8th-Generation 3D-NAND Flash Memory with 164MB/s Write Throughput and a 2.4Gb/s Interface. - Moosung Kim; Sung-Won Yun; Jungjune Park; Hyun Kook Park; Jungyu Lee 002; Yeong Seon Kim; Dae-Hoon Na; Sara Choi; Youngsun Song; Jonghoon Lee; Hyun-Jun Yoon; Kangbin Lee; et al. (ISSCC, 2022)

30.1 A 28Gb/mm24XX-Layer 1Tb 3b/Cell WF-Bonding 3D-NAND Flash with 5.6Gb/s/Pin IOs. - Sang-Soo Park; Jaedoeg Lyu; Myungjun Kim; Jaeyun Lee; Youngsun Song; Chungho Yu; Makoto Hirano; Yongseok Kwon; Jonghoon Park; Hojoon Kim; Daein Lee; Donghyun Seo; et al. (ISSCC, 2025)