Substrate noise mitigation using high resistivity base silicon wafer for a 14 GHz VCO on 28 nm FD-SOI. - Youssef Bendou; Martin Rack; Dimitri Lederer; Andreia Cathelin; Jean-Pierre Raskin (NEWCAS, 2023)

Analysis of Back-Gate Bias Control on EVM Measurements of a Dual-Band Power Amplifier in 22 nm FD-SOI for 5G 28 and 39 GHz Applications. - Lucas Nyssens; M. Nabet; Martin Rack; Youssef Bendou; Sidina Wane; Jacques Sombrin; Jean-Pierre Raskin; Dimitri Lederer (IEEE Trans. Circuits Syst. I Regul. Pap., 2025)