First Demonstration of a-IGZO GAA Nanosheet FETs Featuring Achievable SS=61mV/dec, Ioff<10-7 μA/μm, DIBL =44mV/V, Positive VT, and Process Temp. of 300 °C. - Jih-Chao Chiu; Eknath Sarkar; Yuan-Ming Liu; Yu-Ciao Chen; Yu-Cheng Fan; C. W. Liu (VLSI Technology and Circuits, 2023)