ESD Capability Analysis of High-voltage nLDMOSs by the Bulk Terminal Modulation. - Jhong-Yi Lai; Shen-Li Chen; Zhi-Wei Liu; Xing-Chen Mai; Yu-Jie Chung (ICCE-TW, 2022)

An Investigation of ESD-Enhancement by the Drain-side Embedded SCR Area Modulation for HV pLDMOSs. - Zhi-Wei Liu; Shen-Li Chen; Jhong-Yi Lai; Xing-Chen Mai; Yu-Jie Chung (ICCE-TW, 2022)

High-voltage nLDMOS Drain Side Schottky/SCR Modulations for Enhancement Reliability Capabilities. - Ting-En Lin; Shen-Li Chen; Zhi-Wei Liu; Xing-Chen Mai; Xiu-Yuan Yang; Yu-Jie Chung (ICCE-Taiwan, 2023)

ESD-capability Study of High-voltage nLDMOSs with out the Drift Region DPW Effect. - Xiu-Yuan Yang; Xing-Chen Mai; Shen-Li Chen; Yu-Jie Chung; Jhong-Yi Lai; Ting-En Lin (ICCE-Taiwan, 2023)