ESD Immunity Impacts of the Drain-Side Heterojunction Device Addition in HV 60 V n/pLDMOS Devices. - Sheng-Kai Fan; Shen-Li Chen; Yu-Lin Jhou; Pei-Lin Wu; Po-Lin Lin (GCCE, 2019)

Evaluating the Drift-Region Length Effect of nLDMOS on ESD Ability with a TLP Testing System. - Po-Lin Lin; Shen-Li Chen; Pei-Lin Wu; Yu-Lin Jhou; Sheng-Kai Fan (GCCE, 2019)

Channel- & Drift Region's STI-Lengths Impacts of ESD Immunity in HV 60 V nLDMOS Devices. - Sheng-Kai Fan; Shen-Li Chen; Yu-Lin Jhou; Pei-Lin Wu; Po-Lin Lin (ICCE-TW, 2019)

ESD-Reliability Investigation 1of an UHV Elliptical LDMOS-SCR by the Drain-Side Junction Replacement. - Po-Lin Lin; Shen-Li Chen; Pei-Lin Wu; Yu-Lin Jhou; Sheng-Kai Fan (ICCE-TW, 2019)